diffusion technology造句
例句與造句
- in recent years, by use of the characters including high-penetration ability of ga in sio2, small diffusion stress in si, large diffusion efficiency and large solid-solubility, open-tube ga-diffusion technology in sio2 / si system was realized
近年來，巧妙地利用ga具有強穿透sio_2的能力，在si中具有擴散應力小、擴散系數大、固溶度較大等特點，實現了開管sio_2si系下的擴散。 - with the development of doping technology, the formation of the base region in high-voltage transistor can be made by b diffusion technology, b-a1 paste-layer diffusion technology, close-tube ga-diffusion technology and open-tube gallium-diffusion technology
隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁涂層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。 - with the development of doping technology, the formation of the base region in high-voltage transistor can be made by b diffusion technology, b-a1 paste-layer diffusion technology, close-tube ga-diffusion technology and open-tube gallium-diffusion technology
隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁涂層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。 - with the development of doping technology, the formation of the base region in high-voltage transistor can be made by b diffusion technology, b-a1 paste-layer diffusion technology, close-tube ga-diffusion technology and open-tube gallium-diffusion technology
隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁涂層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。 - with the development of doping technology, the formation of the base region in high-voltage transistor can be made by b diffusion technology, b-a1 paste-layer diffusion technology, close-tube ga-diffusion technology and open-tube gallium-diffusion technology
隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁涂層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。 - It's difficult to find diffusion technology in a sentence. 用diffusion technology造句挺難的
- at the initial stage of planar technique, b was employed as ideal diffusion impurity in base-region of npn si planar devices because of the match of its solid-solubility and diffusion coefficient in si with those of p in emission-region, and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly-changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high-reversal-voltage devics . thereafter b-a1 paste-layer diffusion technology and close-tube ga-diffusion technology had been developed, while the former can lead to relatively large the base-region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由于b在硅中的固溶度、擴散系數與n型發射區的磷相匹配，sio_2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大(1000時達到510~(20)，擴散系數小，b在硅中的雜質分布不易形成pn結中雜質的線性緩變分布，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁涂層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t_f值較高，熱穩定性差；后者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。 - at the initial stage of planar technique, b was employed as ideal diffusion impurity in base-region of npn si planar devices because of the match of its solid-solubility and diffusion coefficient in si with those of p in emission-region, and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly-changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high-reversal-voltage devics . thereafter b-a1 paste-layer diffusion technology and close-tube ga-diffusion technology had been developed, while the former can lead to relatively large the base-region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由于b在硅中的固溶度、擴散系數與n型發射區的磷相匹配，sio_2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大(1000時達到510~(20)，擴散系數小，b在硅中的雜質分布不易形成pn結中雜質的線性緩變分布，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁涂層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t_f值較高，熱穩定性差；后者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。